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| HITFET(R)BTS 949 Smart Lowside Power Switch Features * Logic Level Input * Input Protection (ESD) * Thermal Shutdown * Overload protection * Short circuit protection * Overvoltage protection * Current limitation * Maximum current adjustable with external resistor * Current sense * Status feedback with external input resistor * Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS R DS(on) I D(lim) I D(ISO) EAS 60 18 9.5 19 V m A A 6000 mJ Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits N channel vertical power FET in Smart SIPMOS (R) chip on chip technology. Fully protected by embedded protected functions. V bb General Description + LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M 2 3 1 IN 4 CC Overtemperature protection ESD R CC Overload protection Short circuit Short circuit protection protection Source 5 HITFET (R) Semiconductor Group Page 1 02.12.1998 BTS 949 Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 without RCC Continuous input current -0.2V V IN 10V 1) Symbol Value 60 15 50 Unit V VDS VDS(SC) I IN no limit | IIN | 2 mA VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj T stg Ptot EAS - 40 ... +150 - 55 ... +150 240 6000 3000 C W mJ V T C = 25 C Unclamped single pulse inductive energy I D(ISO) = 19 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection V LoadDump2) = V A + VS VIN=low or high; V A=13.5 V t d = 400 ms, RI = 2 , ID=0,5*19A t d = 400 ms, RI = 2 , ID= 19A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 VLD 110 92 E 40/150/56 Thermal resistance junction - case: junction - ambient: SMD version, device on PCB: 3) RthJC RthJA RthJA 0.7 75 45 K/W 1A sensor holding current of 500 A has to be guaranted in the case of thermal shutdown (see also page 3) 2V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Loaddump 3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 m thick) copper area for Drain connection. PCB is vertical without blown air. Semiconductor Group Page 2 02.12.1998 BTS 949 Electrical Characteristics Parameter at Tj=25C, unless otherwise specified Characteristics Drain source clamp voltage Symbol min. Values typ. 1.7 400 3000 max. 73 25 2.2 100 1000 6000 V A V A Unit VDS(AZ) I DSS VIN(th) IIN(1) 60 1.3 1500 T j = - 40 ...+ 150C, ID = 10 mA Off state drain current VDS = 32 V, T j = -40...+150 C, V IN = 0 V Input threshold voltage I D = 3,9 mA Input current - normal operation, ID Input current - current limitation mode, I D=ID(lim): I IN(2) VIN = 10 V Input current - after thermal shutdown, ID=0 A: VIN = 10 V Input holding current after thermal shutdown I IN(3) I IN(H) T j = 25 C T j = 150 C On-state resistance 500 300 18 30 14 25 - m 22 44 18 36 A RDS(on) - I D = 19 A, VIN = 5 V, Tj = 25 C I D = 19 A, VIN = 5 V, Tj = 150 C On-state resistance RDS(on) 19 I D = 19 A, VIN = 10 V, T j = 25 C I D = 19 A, VIN = 10 V, T j = 150 C Nominal load current (ISO 10483) I D(ISO) VIN = 10 V, V DS = 0.5 V, TC = 85 C Semiconductor Group Page 3 02.12.1998 BTS 949 Electrical Characteristics Parameter at Tj=25C, unless otherwise specified Characteristics Initial peak short circuit current limit Symbol min. Values typ. max. Unit ID(SCp) ID(lim) - 175 - A VIN = 10 V, VDS = 12 V Current limit 1) VIN = 10 V, VDS = 12 V, tm = 350 s, Tj = -40...+150 C, without RCC VIN = 10 V, VDS = 12 V, tm = 350 s, Tj = -40...+150 C, RCC = 0 Dynamic Characteristics Turn-on time Turn-off time Slew rate on Slew rate off 9.5 150 19 220 40 270 VIN to 90% I D: V IN to 10% ID: t on t off G9 '6GWRQ G9'6GW RII - 40 70 1 1 100 170 3 3 s RL = 1 , VIN = 0 to 10 V, Vbb = 12 V RL = 1 , VIN = 10 to 0 V, Vbb = 12 V 70 to 50% Vbb: RL = 1 , VIN = 0 to 10 V, Vbb = 12 V 50 to 70% Vbb: V/s RL = 1 , VIN = 10 to 0 V, Vbb = 12 V Protection Functions Thermal overload trip temperature Unclamped single pulse inductive energy T jt EAS 150 6000 1800 165 - - C mJ I D = 19 A, Tj = 25 C, Vbb = 32 V I D = 19 A, Tj = 150 C, Vbb = 32 V Inverse Diode Inverse diode forward voltage VSD - 1,1 - V I F = 5*19A, t m = 300 S, VIN = 0 V 1Device switched on into existing short circuit (see diagram Determination of I D(lim) . Dependant on the application, these values might be exceeded for max. 50 s in case of short circuit occurs while the device is on condition Semiconductor Group Page 4 02.12.1998 BTS 949 Block Diagramm Terms RL I IN 1 RCC V IN V 4 CC IN HITFET CC S 5 3 D ID VDS Vbb Inductive and overvoltage output clamp V Z D S HITFET The ground lead impedance of RCC should be as low as possible Input circuit (ESD protection) Short circuit behaviour V IN I D(SCp) IN ID I D(Lim) ESD-ZD I Source t0 tm t1 t2 ESD zener diodes are not designed for DC current > 2 mA @ VIN>10V. t0: tm: t1: t2: Turn on into a short circuit Measurementpoint for ID(lim) Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Semiconductor Group Page 5 02.12.1998 BTS 949 Maximum allowable power dissipation Ptot = f(Tc) BTS 949 On-state resistance RON = f(Tj ); ID=19A; VIN =10V 40 260 W m 220 200 180 30 RDS(on) Ptot 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 C 150 25 max. 20 typ. 15 10 5 160 0 -50 -25 0 25 50 75 100 C 150 Tj On-state resistance RON = f(Tj ); ID= 19A; VIN=5V 45 Typ. input threshold voltage VIN(th) = f(Tj); ID =3,9A; VDS=12V 2.2 V m 35 1.8 RDS(on) 1.6 30 max. VIN(th) typ. 1.4 1.2 1.0 0.8 0.6 25 20 15 10 0.4 5 0 -50 0.2 -25 0 25 50 75 100 C 150 0.0 -50 -25 0 25 50 75 100 C 150 Tj Tj Page 6 Semiconductor Group 02.12.1998 BTS 949 Typ. transfer characteristics I D = f(V IN); V DS=12V; Tj=25C 160 A 10V A Typ. short circuit current IDlim = f(Tj); RCC =0, VDS =12V Parameter: VIN 250 120 9V 8V ID ID 100 150 7V 80 100 6V 5V 60 40 50 20 4V 3V 0 0 1 2 3 4 5 V 7 0 -50 -25 0 25 50 75 100 C 150 VIN Tj Typ. output characteristic ID = f(VDS); T j=25C Parameter: VIN 150 10V A 6V Safe Operating Area ID(SC) = f(VDS ); Tj =25C 300 A 100 200 5V ID 75 ID 150 4V 50 100 25 VIN=3V 50 0 0 1 2 3 4 5 V 7 0 0 10 20 30 V 50 VDS VDS Page 7 Semiconductor Group 02.12.1998 BTS 949 Typ. current limit versus R CC I D(lim) = f(RCC); T j=25C Parameter: VIN 250 A 10V Typ. current sense characteristics VCC = f(ID); VIN=10V Parameter: RCC , Tj 600 mV no Rcc 200 175 150 125 100 5V 500 450 25C VCC 400 350 300 250 200 150 22 Ohm 125C 47 Ohm 82 Ohm ID 75 50 100 25 0 -2 10 -1 0 1 2 4 50 10 10 10 10 10 RCC 0 0 10 20 30 40 50 A 65 ID Transient thermal impedance ZthJC = f(tP) Parameter: D=t P/T 10 0 K/W D=0.5 0.2 0.1 10 -1 Z thJC 0.05 0.02 10 -2 0.01 0.005 10 -3 0 10 -4 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 2 tP Semiconductor Group Page 8 02.12.1998 BTS 949 Application examples: Current Sense Features and Status Signals IN D S V bb C V CC HITFET CC RCC IN open load thermal shutdown Vcc Vcc reached triptemperature The accuray of Vcc is at each temperature about 10 % Status signal of thermal shutdown by monitoring input current R St IN D S V bb C V IN HITFET CC V V IN thermal shutdown V = RST *IIN(3) Semiconductor Group Page 9 02.12.1998 BTS 949 Package and ordering code all dimensions in mm Ordering code: Q67060-S6703-A4 Ordering Code: Q67060-S6703-A2 Ordering Code: Q67060-S6703-A3 Semiconductor Group Page 10 02.12.1998 BTS 949 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group Page 11 02.12.1998 |
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